Invention Grant
- Patent Title: Semiconductor structure and preheating method thereof
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Application No.: US17396686Application Date: 2021-08-07
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Publication No.: US11862223B2Publication Date: 2024-01-02
- Inventor: Shuliang Ning
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN 2010216794.0 2020.03.25
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/4072 ; H01L25/065 ; H01L25/16 ; H01L25/18

Abstract:
A semiconductor structure and a preheating method thereof are provided. The semiconductor structure includes: a storage chip; a temperature detection unit configured to detect a temperature of the storage chip before the storage chip initiates; and a control chip configured to: before the storage chip initiates, heat the storage chip and determine whether the temperature detected by the temperature detection unit reaches a specified threshold; and if the temperature reaches the specified threshold, control the storage chip to initiate. When the semiconductor structure provided in the present invention works at a low temperature, the storage chip may be heated to the specified threshold, thereby preventing an increase of the resistances on the bit line, the word line, and the metal connection line in the storage chip, and improving the performance of read/write operations of the memory.
Public/Granted literature
- US20210366531A1 SEMICONDUCTOR STRUCTURE AND PREHEATING METHOD THEREOF Public/Granted day:2021-11-25
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