A method for performing memory calibration and an associated System on Chip (SoC) Integrated Circuit (IC) are provided. The method may include: in a power-up and initialization phase, controlling a physical layer (PHY) circuit within the SoC IC to apply power to a memory through a pad set and perform initialization on the memory; in an impedance-calibration-related phase, triggering the memory to perform impedance calibration regarding a set of data pins; in at least one subsequent phase, during performing any calibration operation among a reading-related calibration operation and a writing-related calibration operation, performing a data access test corresponding to a set of test points on a predetermined mask, wherein the predetermined mask is movable with respect to a data eye; and according to whether the data access test is successful, selectively stopping the any calibration operation.