A hybrid multispectral imaging sensor, characterized in that it comprises a photosensitive backside-illumination detector (DET) that is made on a substrate (100) made of InP, and that is formed of a matrix of pixels (105, P1, P2, P3) that are themselves made in a structure based on InGaAs (103), and a filter module (MF) that is formed of a matrix of elementary filters (λ1, λ2, λ3) reproducing said matrix of pixels, and that is mounted into contact with said substrate (100), said substrate (100) made of InP having a thickness less than 50 μm, and preferably less than 30 μm.