In some examples, a semiconductor package includes a semiconductor die; a passivation layer abutting a device side of the semiconductor die; a first conductive layer abutting the device side of the semiconductor die; a second conductive layer abutting the first conductive layer and the passivation layer; a silicon nitride layer abutting the second conductive layer, the silicon nitride layer having a thickness ranging from 300 Angstroms to 3000 Angstroms; and a third conductive layer coupled to the second conductive layer at a gap in the silicon nitride layer, the third conductive layer configured to receive a solder ball.