Invention Grant
- Patent Title: Image sensor employing avalanche diode
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Application No.: US17986947Application Date: 2022-11-15
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Publication No.: US11877082B2Publication Date: 2024-01-16
- Inventor: Tso-Sheng Tsai
- Applicant: PIXART IMAGING INC.
- Applicant Address: TW Hsin-Chu County
- Assignee: PIXART IMAGING INC.
- Current Assignee: PIXART IMAGING INC.
- Current Assignee Address: TW Hsin-Chu County
- Agency: Bruce Stone LLP
- Agent Joseph A. Bruce
- The original application number of the division: US16872626 2020.05.12
- Main IPC: H04N25/75
- IPC: H04N25/75 ; H01L27/146 ; H04N25/76 ; H01L31/107

Abstract:
There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and four P-type or N-type transistors. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits.
Public/Granted literature
- US20230077016A1 IMAGE SENSOR EMPLOYING AVALANCHE DIODE Public/Granted day:2023-03-09
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