An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.