Invention Grant
- Patent Title: Nonvolatile memory device having a dummy bit line driver and operation method thereof
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Application No.: US17693013Application Date: 2022-03-11
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Publication No.: US11887672B2Publication Date: 2024-01-30
- Inventor: Myeong-Woo Lee , Seungyeon Kim , Dongha Shin , Beakhyung Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR 20210034202 2021.03.16
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/24 ; G11C16/30 ; G11C16/28 ; G11C7/10

Abstract:
A nonvolatile memory device includes a plurality of bit lines that is connected with a plurality of cell strings, a common source line that is connected with the plurality of cell strings, at least one dummy bit line that is provided between the common source line and the plurality of bit lines, a control logic circuit that generates at least one dummy bit line driving signal in response to a command from an external device, and a dummy bit line driver that selectively provides a first voltage to the at least one dummy bit line in response to the dummy bit line driving signal.
Public/Granted literature
- US20220301633A1 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2022-09-22
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