Invention Grant
- Patent Title: Random telegraph signal noise reduction scheme for semiconductor memories
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Application No.: US17936445Application Date: 2022-09-29
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Publication No.: US11887675B2Publication Date: 2024-01-30
- Inventor: Toru Tanzawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- The original application number of the division: US12020460 2008.01.25
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/12 ; G11C16/10 ; G11C7/00 ; G11C16/04 ; G11C16/34

Abstract:
Embodiments are provided that include a memory device having a memory array including a plurality of access lines and data lines. The memory device further includes a circuit coupled to the plurality of access lines and configured to provide consecutive pulses to a selected one of the plurality of access lines. Each pulse of the consecutive pulses includes a first voltage and a second voltage. The first voltage is greater in magnitude than the second voltage, and the first voltage is applied for a shorter duration than the second voltage.
Public/Granted literature
- US20230015491A1 RANDOM TELEGRAPH SIGNAL NOISE REDUCTION SCHEME FOR SEMICONDUCTOR MEMORIES Public/Granted day:2023-01-19
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