Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17469017Application Date: 2021-09-08
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Publication No.: US11887905B2Publication Date: 2024-01-30
- Inventor: Susumu Yamada , Shoichiro Omae , Takuo Nagase
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: POSZ LAW GROUP, PLC
- Priority: JP 19043888 2019.03.11
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/495 ; H01L23/00 ; H01L25/18 ; H01L23/36

Abstract:
The semiconductor device includes a semiconductor element having first and second main electrodes, first and second substrates connected to the first and second main electrodes, respectively, first and second main terminals connected to the first and second main electrodes via the first and second substrates, respectively, and a bonding member. The bonding member is interposed between the first and second main electrodes and between the first and second substrates, respectively. At least one of the first and second main terminals includes a plurality of terminals. The first and second main terminals are alternately arranged in one direction orthogonal to the thickness direction of the semiconductor element. The first and second main terminals are directly bonded to the first and second substrates without the bonding member.
Public/Granted literature
- US20210407876A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-30
Information query
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