公开(公告)号：US11908778B2

公开(公告)日：2024-02-20

申请号：US17469303

申请日：2021-09-08

Applicant: DENSO CORPORATION

Inventor： Hiroshi Ishino ,  Ryota Miwa ,  Shoichiro Omae ,  Takuo Nagase

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/50

CPC classification number: H01L23/49524 ,  H01L23/3107 ,  H01L23/49568 ,  H01L23/50

Abstract: A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

公开(公告)号：US12159810B2

公开(公告)日：2024-12-03

申请号：US17746492

申请日：2022-05-17

Applicant: DENSO CORPORATION

Inventor： Akinori Sakakibara ,  Takanori Kawashima ,  Shingo Tsuchimochi ,  Shoichiro Omae

IPC: H01L23/31 ,  H01L23/13 ,  H01L23/373 ,  H01L23/498 ,  H01L25/065 ,  H01L25/07

Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.

公开(公告)号：US11996344B2

公开(公告)日：2024-05-28

申请号：US17469091

申请日：2021-09-08

Applicant: DENSO CORPORATION

Inventor： Shoichiro Omae ,  Hiroshi Ishino

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L23/367 ,  H01L23/3107 ,  H01L23/49517 ,  H01L23/49537 ,  H01L23/49562 ,  H01L24/40 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181

Abstract: A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first heat dissipation member and a second heat dissipation member; and a lead frame including a first main terminal connected to the first heat dissipation member and a second main terminal connected to the second main electrode. The second main terminal includes a connection portion connected with the second main electrode, a facing portion extending from the connection portion and facing the first heat dissipation member, and a non-facing portion. The non-facing portion and the first main terminal are arranged in a direction orthogonal to a thickness direction. A side surface of the first main terminal and a side surface of the non-facing portion of the second main terminal face each other.

公开(公告)号：US11887905B2

公开(公告)日：2024-01-30

申请号：US17469017

申请日：2021-09-08

Applicant: DENSO CORPORATION

Inventor： Susumu Yamada ,  Shoichiro Omae ,  Takuo Nagase

IPC: H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L25/18 ,  H01L23/36

CPC classification number: H01L23/3107 ,  H01L23/49517 ,  H01L23/49537 ,  H01L23/49562 ,  H01L24/40 ,  H01L25/18 ,  H01L23/36 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181

Abstract: The semiconductor device includes a semiconductor element having first and second main electrodes, first and second substrates connected to the first and second main electrodes, respectively, first and second main terminals connected to the first and second main electrodes via the first and second substrates, respectively, and a bonding member. The bonding member is interposed between the first and second main electrodes and between the first and second substrates, respectively. At least one of the first and second main terminals includes a plurality of terminals. The first and second main terminals are alternately arranged in one direction orthogonal to the thickness direction of the semiconductor element. The first and second main terminals are directly bonded to the first and second substrates without the bonding member.

公开(公告)号：US11456238B2

公开(公告)日：2022-09-27

申请号：US17155696

申请日：2021-01-22

Applicant: DENSO CORPORATION

Inventor： Kosuke Kamiya ,  Ryota Tanabe ,  Tomohisa Sano ,  Takuo Nagase ,  Hiroshi Ishino ,  Shoichiro Omae

IPC: H01L23/495 ,  H01L23/48 ,  H01L23/34 ,  H01L21/00 ,  H05K5/02 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L21/48 ,  H01L25/065

Abstract: A semiconductor device configures one arm of an upper-lower arm circuit, and includes: a semiconductor element that includes a first main electrode and a second main electrode, wherein a main current between the first main electrode and the second main electrode; and multiple main terminals that include a first main terminal connected to the first main electrode and a second main terminal connected to the second main electrode. The first main terminal and the second main terminal are placed adjacent to each other; A lateral surface of the first main terminal and a lateral surface of the second main terminal face each other in one direction orthogonal to a thickness direction of the semiconductor element.