Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US17467944Application Date: 2021-09-07
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Publication No.: US11888026B2Publication Date: 2024-01-30
- Inventor: Minhee Choi , Seojin Jeong , Seokhoon Kim , Jungtaek Kim , Pankwi Park , Moonseung Yang , Ryong Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200173677 2020.12.11
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/786 ; H01L29/66

Abstract:
An integrated circuit device includes a fin-type active region on a substrate; at least one nanosheet having a bottom surface facing the fin top; a gate line on the fin-type active region; and a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet, wherein the source/drain region includes a lower main body layer and an upper main body layer, a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region, and the upper main body layer includes a bottom surface contacting the lower facet and a top surface having an upper facet. With respect to a vertical cross section, the lower facet extends along a corresponding first line and the upper facet extends along a second line that intersects the first line.
Public/Granted literature
- US20220190109A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-06-16
Information query
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