Invention Grant
- Patent Title: Gate oxide for nanosheet transistor devices
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Application No.: US17521964Application Date: 2021-11-09
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Publication No.: US11888048B2Publication Date: 2024-01-30
- Inventor: Shahab Siddiqui , Koji Watanabe , Charlotte DeWan Adams , Kai Zhao , Daniel James Dechene , Rishikesh Krishnan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Kimberly Zillig
- The original application number of the division: US16742295 2020.01.14
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/417 ; H01L21/8234 ; H01L29/786 ; H01L21/02 ; H01L29/423

Abstract:
A method of forming a semiconductor structure includes forming a first nanosheet stack and a second nanosheet stack on a semiconductor substrate. The first nanosheet stack includes a plurality of alternating first sacrificial layers and first channel layers. The first sacrificial layers each define a first sacrificial height. The second nanosheet stack includes a plurality of alternating second sacrificial layers and second channel layers. The second sacrificial layers each define a second sacrificial height greater than the first sacrificial height of the first sacrificial layers. The method further includes removing the first and second sacrificial layers respectively from the first and second nanosheet stacks. A metal gate is deposited over the first and second nanosheet stacks to form respective first and second nanosheet transistor structures.
Public/Granted literature
- US20220069104A1 GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES Public/Granted day:2022-03-03
Information query
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