Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
-
Application No.: US17193476Application Date: 2021-03-05
-
Publication No.: US11889679B2Publication Date: 2024-01-30
- Inventor: Sungyeon Ryu , Eunjung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200099387 2020.08.07
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H10B12/00 ; H01L49/02

Abstract:
Disclosed are a semiconductor device and a method of fabricating the same. In the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. Thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.
Information query
IPC分类: