公开(公告)号：US12262526B2

公开(公告)日：2025-03-25

申请号：US18540076

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyeon Ryu ,  Eunjung Kim

IPC: H01L21/762 ,  H01L49/02 ,  H10B12/00

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. In the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. Thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.

公开(公告)号：US20240284664A1

公开(公告)日：2024-08-22

申请号：US18462677

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungeun Kim ,  Jinyeong Kim ,  Sungyeon Ryu ,  Hyeonok Jung ,  Sei-Ryung Choi

IPC: H10B12/00

CPC classification number: H10B12/50 ,  H10B12/315 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor device includes peripheral active patterns on a substrate, first and second peripheral trench regions adjacent the peripheral active patterns, a first isolation liner on inner surfaces of the first and second peripheral trench regions, a second isolation liner on the first isolation liner in the first and second peripheral trench regions, and a device isolation layer on the second isolation liner in the first and second peripheral trench regions. The device isolation layer includes a seam therein in the second peripheral trench region. A width of the first peripheral trench region is greater than a width of the second peripheral trench region at a first height corresponding to top surfaces of the peripheral active patterns with respect to the substrate.

公开(公告)号：US11889679B2

公开(公告)日：2024-01-30

申请号：US17193476

申请日：2021-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyeon Ryu ,  Eunjung Kim

IPC: H01L21/762 ,  H10B12/00 ,  H01L49/02

CPC classification number: H10B12/30 ,  H01L28/60 ,  H10B12/033

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. In the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. Thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.