- 专利标题： Molybdenum thin films by oxidation-reduction
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申请号： US16990303申请日： 2020-08-11
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公开(公告)号： US11891690B2公开(公告)日： 2024-02-06
- 发明人: Feng Q. Liu , Alexander Jansen , Mark Saly
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： C23C16/18
- IPC分类号： C23C16/18 ; C23C16/455 ; H01L21/285 ; H01L21/02
摘要：
A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.
公开/授权文献
- US20210047726A1 Molybdenum Thin Films By Oxidation-Reduction 公开/授权日：2021-02-18
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