公开(公告)号：US11894233B2

公开(公告)日：2024-02-06

申请号：US17955996

申请日：2022-09-29

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28568 ,  H01L23/53242

摘要： Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20230386833A1

公开(公告)日：2023-11-30

申请号：US17824889

申请日：2022-05-25

申请人： Applied Materials, Inc.

发明人： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC分类号： H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/0271 ,  C23C14/16 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76816 ,  H01L21/76831

摘要： Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US20230002888A1

公开(公告)日：2023-01-05

申请号：US17365919

申请日：2021-07-01

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mark Saly ,  David Thompson

IPC分类号： C23C16/18 ,  C23C16/50 ,  C23C16/455

摘要： Methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising a metal selected from the group consisting of molybdenum (Mo), tungsten (W), osmium (Os), rhenium (Re), iridium (Ir), nickel (Ni) and ruthenium (Ru) and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C0-C10 alkyl, cycloalkyl, alkenyl, or alkynyl group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film; and exposing the carbon-less iodine-containing metal film to a reductant to form a metal film. Some embodiments deposit a metal film with greater than or equal to 90% metal species on an atomic basis.

公开(公告)号：US20180195170A1

公开(公告)日：2018-07-12

申请号：US15863348

申请日：2018-01-05

申请人： Applied Materials, Inc.

发明人： Jeffrey W. Anthis ,  Ghazal Saheli ,  Feng Q. Liu ,  David Thompson

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/40 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553

摘要： Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

公开(公告)号：US20160181150A1

公开(公告)日：2016-06-23

申请号：US14919149

申请日：2015-10-21

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

摘要： Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

摘要翻译： 描述了制造具有包含氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包含Mn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US20160145738A1

公开(公告)日：2016-05-26

申请号：US14920001

申请日：2015-10-22

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC分类号： C23C16/18 ,  C23C16/455 ,  C23C16/458 ,  C23C16/02

CPC分类号： C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

摘要： Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

摘要翻译： 描述了相对于电介质表面在金属表面上选择性地沉积金属的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以最小化其上的沉积并将基底暴露于金属前体和醇以沉积膜。

公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC分类号： C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC分类号： C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

摘要： Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

摘要翻译： 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US20240360549A1

公开(公告)日：2024-10-31

申请号：US18140179

申请日：2023-04-27

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Byunghoon Yoon ,  Joung-Joo Lee ,  Avgerinos V. Gelatos ,  Mark J. Saly

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532

CPC分类号： C23C16/34 ,  C23C16/45527 ,  H01L21/76844 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5226

摘要： A method includes performing a reactant step of a deposition cycle of a deposition process to form a molybdenum (Mo)-based material, performing a Mo precursor step of the deposition cycle, and performing a treatment step of the deposition cycle. Performing the reactant step includes introducing a reactant, performing the Mo precursor step includes introducing a Mo precursor, and performing the treatment step includes introducing a treatment gas. The deposition process is performed at a temperature that is less than or equal to about 450° C.

公开(公告)号：US20240200188A1

公开(公告)日：2024-06-20

申请号：US18590141

申请日：2024-02-28

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC分类号： C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC分类号： C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20230382933A1

公开(公告)日：2023-11-30

申请号：US18232421

申请日：2023-08-10

申请人： Applied Materials, Inc.

发明人： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC分类号： C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC分类号： C07F11/005 ,  C23C16/45553 ,  C23C16/4408 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  C23C16/0227 ,  C23C16/0209

摘要： Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.