Invention Grant
- Patent Title: Semiconductor device with contact check circuitry
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Application No.: US17406121Application Date: 2021-08-19
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Publication No.: US11892521B2Publication Date: 2024-02-06
- Inventor: Tse-Hua Yao
- Applicant: ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC.
- Applicant Address: TW Hsinchu
- Assignee: ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC.
- Current Assignee: ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC.
- Current Assignee Address: TW Hsinchu
- Main IPC: G01R31/68
- IPC: G01R31/68 ; G01R1/067 ; H01L23/525

Abstract:
A semiconductor device with contact check circuitry is provided. The semiconductor device includes a plurality of pads, an internal circuit, and a contact check circuit. The plurality of pads includes a first pad and a second pad. The internal circuit is coupled to the plurality of pads. The contact check circuit, at least coupled to the first pad and the second pad, is used for checking, when the semiconductor device is under test, contact connections to the first pad and the second pad to generate a check result signal according to comparison of a first test signal and a second test signal received from the first pad and the second pad with at least one reference signal.
Public/Granted literature
- US20230057897A1 SEMICONDUCTOR DEVICE WITH CONTACT CHECK CIRCUITRY Public/Granted day:2023-02-23
Information query
IPC分类: