Invention Grant
- Patent Title: Stacked DRAM device and method of manufacture
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Application No.: US17568649Application Date: 2022-01-04
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Publication No.: US11894093B2Publication Date: 2024-02-06
- Inventor: Thomas Vogelsang
- Applicant: Rambus Inc.
- Applicant Address: US CA San Jose
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA San Jose
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L23/48 ; H01L25/065 ; H10B12/00 ; G11C5/02

Abstract:
A memory device includes a first dynamic random access memory (DRAM) integrated circuit (IC) chip including first memory core circuitry, and first input/output (I/O) circuitry. A second DRAM IC chip is stacked vertically with the first DRAM IC chip. The second DRAM IC chip includes second memory core circuitry, and second I/O circuitry. Solely one of the first DRAM IC chip or the second DRAM IC chip includes a conductive path that electrically couples at least one of the first memory core circuitry or the second memory core circuitry to solely one of the first I/O circuitry or the second I/O circuitry, respectively.
Public/Granted literature
- US20220238141A1 STACKED DRAM DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2022-07-28
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