Invention Grant
- Patent Title: Trench capacitor assembly for high capacitance density
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Application No.: US18298211Application Date: 2023-04-10
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Publication No.: US11894366B2Publication Date: 2024-02-06
- Inventor: Jonghae Kim , Milind Shah , Periannan Chidambaram
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: QUALCOMM Incorporated
- The original application number of the division: US17144411 2021.01.08
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L23/64 ; H01L25/065 ; H01L25/10 ; H01L49/02 ; H01L29/94 ; H01L29/66 ; H10B12/00

Abstract:
Certain aspects of the present disclosure provide a capacitor assembly, a stacked capacitor assembly, an integrated circuit (IC) assembly comprising such a stacked capacitor assembly, and methods for fabricating the same. One exemplary capacitor assembly generally includes a first array of trench capacitors and a second array of trench capacitors. The second array of trench capacitors may be disposed adjacent to and electrically coupled to the first array of trench capacitors. Additionally, the second array of trench capacitors may be inverted with respect to the first array of trench capacitors.
Public/Granted literature
- US20230246024A1 TRENCH CAPACITOR ASSEMBLY FOR HIGH CAPACITANCE DENSITY Public/Granted day:2023-08-03
Information query
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