Invention Grant
- Patent Title: High electron mobility transistor and method for fabricating the same
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Application No.: US17745841Application Date: 2022-05-16
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Publication No.: US11894441B2Publication Date: 2024-02-06
- Inventor: Chun-Ming Chang , Che-Hung Huang , Wen-Jung Liao , Chun-Liang Hou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1910953637.5 2019.10.09
- The original application number of the division: US16666414 2019.10.29
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778

Abstract:
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
Public/Granted literature
- US20220278222A1 HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-09-01
Information query
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