Invention Grant
- Patent Title: Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor and low-temperature preparation method thereof
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Application No.: US18140342Application Date: 2023-04-27
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Publication No.: US11897815B2Publication Date: 2024-02-13
- Inventor: YuanYuan Yang , XiaoZhen Li , MengJiang Xing , YanLing Luo , HongYu Yang , QingYang Fan
- Applicant: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China
- Applicant Address: CN Huzhou
- Assignee: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China
- Current Assignee: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China
- Current Assignee Address: CN Huzhou
- Agent Zhigang Ma
- Priority: CN 2210472764.5 2022.04.29
- Main IPC: C04B35/495
- IPC: C04B35/495 ; C04B35/626 ; C04B35/64 ; C04B35/653 ; H01G4/12

Abstract:
A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.
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