公开(公告)号：US11897815B2

公开(公告)日：2024-02-13

申请号：US18140342

申请日：2023-04-27

申请人： Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

发明人： YuanYuan Yang ,  XiaoZhen Li ,  MengJiang Xing ,  YanLing Luo ,  HongYu Yang ,  QingYang Fan

IPC分类号： C04B35/495 ,  C04B35/626 ,  C04B35/64 ,  C04B35/653 ,  H01G4/12

CPC分类号： C04B35/495 ,  C04B35/6262 ,  C04B35/64 ,  C04B35/653 ,  H01G4/1227 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/442 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/76

摘要： A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.

公开(公告)号：US20230348332A1

公开(公告)日：2023-11-02

申请号：US18140342

申请日：2023-04-27

申请人： Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

发明人： YuanYuan Yang ,  XiaoZhen Li ,  MengJiang Xing ,  YanLing Luo ,  HongYu Yang ,  QingYang Fan

IPC分类号： C04B35/495 ,  C04B35/626 ,  C04B35/64 ,  C04B35/653 ,  H01G4/12

CPC分类号： C04B35/495 ,  C04B35/6262 ,  C04B35/64 ,  C04B35/653 ,  H01G4/1227 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3409 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/442 ,  C04B2235/6567 ,  C04B2235/6562 ,  C04B2235/76

摘要： A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.

公开(公告)号：US11858855B1

公开(公告)日：2024-01-02

申请号：US18352264

申请日：2023-07-14

申请人： Yangtze Delta Region Institute (Huzhou) , University of Electronic Science and Technology of China

发明人： MengJiang Xing ,  XiaoZhen Li ,  YuanYuan Yang ,  YanLing Luo ,  HongYu Yang ,  QingYang Fan ,  YunSheng Zhao ,  Hao Li

IPC分类号： C04B35/462 ,  C04B35/49 ,  C04B35/626 ,  C04B35/634

CPC分类号： C04B35/49 ,  C04B35/6261 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/62685 ,  C04B35/63424 ,  C04B2235/3203 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/6562 ,  C04B2235/96

摘要： A low-temperature sintered microwave dielectric ceramic material and a preparation method thereof are provided. The ceramic material includes a base material and a low-melting-point glass material; a general chemical formula of the base material is (Zn0.9Cu0.1)0.15Nb0.3(Ti0.9Zr0.1)0.55O2; a percent by weight of the low-melting-point glass material is in a range of 1 wt. % to 2 wt. %; chemical compositions of the low-melting-point glass material include A2CO3-M2O3—SiO2, A of which includes at least two of a lithium ion, a sodium ion, and a potassium ion, M of which includes at least one of a boron ion and a bismuth ion; and a sintering temperature of the ceramic material is in a range of 850° C. to 900° C. The microwave dielectric ceramic material has the advantages of low dielectric loss, simple and controllable process, etc., has good process stability, and can meet requirements for radio communication industry.

公开(公告)号：US11854745B2

公开(公告)日：2023-12-26

申请号：US18140424

申请日：2023-04-27

申请人： Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

发明人： YuanYuan Yang ,  XiaoZhen Li ,  MengJiang Xing ,  YanLing Luo ,  HongYu Yang ,  QingYang Fan ,  Hao Li ,  YunSheng Zhao

IPC分类号： H01G4/02 ,  C04B35/626 ,  C04B35/64 ,  H01G4/30 ,  H01G4/12

CPC分类号： H01G4/1218 ,  C04B35/62615 ,  C04B35/64 ,  H01G4/30

摘要： A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al1/2Nb1/2)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of −220±30 ppm/° C. is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.

公开(公告)号：US20230352239A1

公开(公告)日：2023-11-02

申请号：US18140424

申请日：2023-04-27

申请人： Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

发明人： YuanYuan Yang ,  XiaoZhen Li ,  MengJiang Xing ,  YanLing Luo ,  HongYu Yang ,  QingYang Fan ,  Hao Li ,  YunSheng Zhao

IPC分类号： C04B35/626 ,  C04B35/64 ,  H01G4/12 ,  H01G4/30

CPC分类号： H01G4/1218 ,  C04B35/62615 ,  C04B35/64 ,  H01G4/30

摘要： A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al½Nb½)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of -220±30 ppm/°C is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.