- 专利标题： Thermal control for formation and processing of aluminum nitride
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申请号： US18093428申请日： 2023-01-05
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公开(公告)号： US11913136B2公开(公告)日： 2024-02-27
- 发明人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- 申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- 申请人地址： US NY Watervliet
- 专利权人： CRYSTAL IS, INC.
- 当前专利权人： CRYSTAL IS, INC.
- 当前专利权人地址： US NY Green Island
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C30B29/40 ; C30B23/06 ; H01L33/00 ; C01B21/072 ; C30B23/00 ; H01S5/30 ; H01S5/343 ; H01S5/02 ; H01L21/02
摘要：
In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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