- 专利标题: Semiconductor power module and power conversion device
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申请号: US16961774申请日: 2018-12-13
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公开(公告)号: US11916001B2公开(公告)日: 2024-02-27
- 发明人: Kozo Harada
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Chiyoda-ku
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: XSENSUS LLP
- 优先权: JP 18046377 2018.03.14
- 国际申请: PCT/JP2018/045814 2018.12.13
- 国际公布: WO2019/176199A 2019.09.19
- 进入国家日期: 2020-07-13
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/04 ; H01L23/14 ; H01L23/31 ; H02M7/5387 ; H02P27/08
摘要:
A semiconductor power module includes a base plate, an insulating substrate, a power semiconductor element, an external terminal, a main terminal, a connected body, a case, a highly-insulating voltage-resisting resin material, a sealing resin, and a cover. The main terminal is connected to the connected body. The connected body is directly joined to the metal plate. The connected body is provided with a receiving section in which the main terminal is received. The receiving section is provided with a slit portion. The slit portion extends from a lower end side of the receiving section toward an upper end side thereof. The lower end side is located on a side close to the insulating substrate. The upper end side is located opposite to the side close to the insulating substrate.
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