Invention Grant
- Patent Title: Read/write method and memory device
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Application No.: US17310495Application Date: 2020-11-09
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Publication No.: US11922023B2Publication Date: 2024-03-05
- Inventor: Shuliang Ning , Jun He , Jie Liu , Zhan Ying
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Anhui
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010250011.0 2020.04.01
- International Application: PCT/CN2020/127508 2020.11.09
- International Announcement: WO2021/196619A 2021.10.07
- Date entered country: 2021-08-05
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F3/06 ; G06F11/10

Abstract:
A read/write method includes: applying a read command to a memory device, the read command pointing to address information, reading to-be-read data from a storage cell corresponding to the address information to which the read command points, and if an error occurs in the to-be-read data, storing the address information to which the read command points in a preset storage space. The read/write operation is not performed on the address information stored in the preset storage space when the user executes the read or write operation on the memory device, which avoids a data error or data loss and greatly improves the reliability and prolongs the service life of the memory device.
Public/Granted literature
- US20220317891A1 READ/WRITE METHOD AND MEMORY DEVICE Public/Granted day:2022-10-06
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