Invention Grant
- Patent Title: Methods of forming apparatuses having tungsten-containing structures
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Application No.: US17076658Application Date: 2020-10-21
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Publication No.: US11923305B2Publication Date: 2024-03-05
- Inventor: Luca Fumagalli , Davide Colombo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- The original application number of the division: US15904683 2018.02.26
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/02 ; H01L21/285 ; H01L21/768 ; H01L23/528 ; H10B12/00
Abstract:
Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.
Public/Granted literature
Information query
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