Invention Grant
- Patent Title: Bump structure and method of manufacturing bump structure
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Application No.: US17875291Application Date: 2022-07-27
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Publication No.: US11923326B2Publication Date: 2024-03-05
- Inventor: Ching-Yu Chang , Ming-Da Cheng , Ming-Hui Weng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Studebaker & Brackett PC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C08G73/10

Abstract:
A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
Public/Granted literature
- US20220406741A1 BUMP STRUCTURE AND METHOD OF MANUFACTURING BUMP STRUCTURE Public/Granted day:2022-12-22
Information query
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