公开(公告)号：US20250147414A1

公开(公告)日：2025-05-08

申请号：US18386658

申请日：2023-11-03

Applicant: Taiwan Semiconductor Manufacturing Company LTD

Inventor： Shi-Cheng Wang ,  An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. A metallic cross-linker is used with the metallic photoresist. The cross-linker comprises a metal core and a plurality of ligands. The ligands may comprise at least one vinyl group or at least one acetylene group; or comprise an acrylate; or comprise a cinnamate; or be unable to participate in a crosslinking reaction. Upon radiation exposure, the ligands separate from the metal core, and the metal core can crosslink, or the ligands may crosslink. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.

公开(公告)号：US12249507B2

公开(公告)日：2025-03-11

申请号：US17885114

申请日：2022-08-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/67

Abstract: A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

公开(公告)号：US12174540B2

公开(公告)日：2024-12-24

申请号：US17482112

申请日：2021-09-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/09 ,  G03F7/004 ,  G03F7/105 ,  G03F7/11 ,  H01L21/027 ,  H01L21/308

Abstract: A method for manufacturing a semiconductor device includes forming a resist structure including forming a resist layer including a resist composition over a substrate. After forming the resist layer, the resist layer is treated with an additive. The additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator.

公开(公告)号：US12159787B2

公开(公告)日：2024-12-03

申请号：US17316221

申请日：2021-05-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Cheng Liu ,  Ming-Hui Weng ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: H01L21/027 ,  C23C16/04 ,  C23C16/455

Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US12135501B2

公开(公告)日：2024-11-05

申请号：US18230062

申请日：2023-08-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jia-Lin Wei ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/00 ,  H01L21/033

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20240126170A1

公开(公告)日：2024-04-18

申请号：US18200495

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Chih HO ,  Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F7/038 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0382 ,  G03F7/2004 ,  H01L21/0275

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.

公开(公告)号：US20240118618A1

公开(公告)日：2024-04-11

申请号：US18133933

申请日：2023-04-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Chih HO ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/075 ,  H01L21/027

CPC classification number: G03F7/0757 ,  H01L21/0276

Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.

公开(公告)号：US11762296B2

公开(公告)日：2023-09-19

申请号：US17815662

申请日：2022-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/32 ,  G03F7/095 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/203 ,  G03F7/322 ,  G03F7/325 ,  H01L21/0271

Abstract: A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.

公开(公告)号：US11728161B2

公开(公告)日：2023-08-15

申请号：US17864293

申请日：2022-07-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Jing Hong Huang ,  Ching-Yu Chang ,  Wei-Han Lai

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  H01L21/02115

Abstract: A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.

公开(公告)号：US11656553B2

公开(公告)日：2023-05-23

申请号：US17315595

申请日：2021-05-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Li-Yen Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/16 ,  H01L21/311 ,  H01L21/033 ,  G03F7/09 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

CPC classification number: G03F7/70025 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/094 ,  G03F7/168 ,  G03F7/70033 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31105 ,  H01L21/31144

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The method includes exposing a portion of the resist layer. The resist layer includes a photoacid generator (PAG) group, a quencher group, an acid-labile group (ALG) and a polar unit (PU). The method also includes performing a baking process on the resist layer and developing the resist layer to form a patterned resist layer. The method further includes doping a portion of the material layer by using the patterned resist layer as a mask to form a doped region. In addition, the method includes removing the patterned resist layer.