- 专利标题: Pressurization type method for manufacturing metal monoatomic layer, metal monoatomic layer structure, and pressurization type apparatus for manufacturing metal monoatomic layer
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申请号: US17154093申请日: 2021-01-21
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公开(公告)号: US11926898B2公开(公告)日: 2024-03-12
- 发明人: Myung Mo Sung , Kyu-Seok Han , Hongbum Kim
- 申请人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 申请人地址: KR Seoul
- 专利权人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人地址: KR Seoul
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR 20160052633 2016.04.29
- 分案原申请号: US16172179 2018.10.26
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; B01J3/00 ; B01J3/02 ; B01J3/03 ; C23C16/14 ; C23C16/52
摘要:
A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.
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