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公开(公告)号：US10886502B2
公开(公告)日：2021-01-05
申请号：US16223634
申请日：2018-12-18
发明人： Myung Mo Sung , Lynn Lee , Hong Ro Yoon
摘要： A barrier according to an embodiment of the present invention is provided. The barrier includes a polymer configured of a plurality of first atoms; and an inorganic material configured of a plurality of second atoms and coexisting with the organic material, wherein an atomic planar density defined by the number of atoms per cm2 of the first atoms and the second atoms exceeds 1.9×1017 atoms/cm2.
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公开(公告)号：US20210164102A1
公开(公告)日：2021-06-03
申请号：US17154093
申请日：2021-01-21
发明人： Myung Mo Sung , Kyu-Seok Han , Hongbum Kim
摘要： A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.
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公开(公告)号：US11814723B2
公开(公告)日：2023-11-14
申请号：US16166500
申请日：2018-10-22
发明人： Myung Mo Sung , Hong Bum Kim , Jin Won Jung , Kyu Seok Han
IPC分类号： C23C16/02 , C23C16/06 , C23C16/455 , B32B5/04 , B82B1/00 , C23C16/08 , B32B15/00 , C23C16/56 , B05D1/00 , B05D7/00 , B32B7/04 , C23C16/44 , B32B7/02 , C23C30/00 , B32B15/04 , C23C16/14 , B32B7/025 , C23C16/18 , C23C16/16 , B82B3/00
CPC分类号： C23C16/0272 , B05D1/60 , B05D7/52 , B32B7/02 , B32B7/025 , B32B7/04 , B32B15/00 , B32B15/04 , C23C16/0281 , C23C16/06 , C23C16/08 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/44 , C23C16/455 , C23C16/45525 , C23C16/45527 , C23C16/45555 , C23C16/45557 , C23C16/56 , C23C30/00 , B82B1/001 , B82B1/008 , B82B3/0009 , B82B3/0019 , B82B3/0038 , B82B3/0066 , B82B3/0095 , Y10T428/1284 , Y10T428/12556 , Y10T428/12806 , Y10T428/12826 , Y10T428/12833 , Y10T428/2495 , Y10T428/24967 , Y10T428/24975 , Y10T428/26 , Y10T428/261 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/268
摘要： A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.
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公开(公告)号：US10991831B2
公开(公告)日：2021-04-27
申请号：US16223937
申请日：2018-12-18
发明人： Myung Mo Sung , Jinwon Jung , Hongbum Kim , Jin Seon Park
IPC分类号： H01L29/15 , H01L29/786 , H01L29/66 , H01L29/22 , H01L29/04 , H01L21/768
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
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公开(公告)号：US09576876B2
公开(公告)日：2017-02-21
申请号：US14413754
申请日：2013-11-04
发明人： Myung Mo Sung , Kyu Seok Han
IPC分类号： H01L51/40 , H01L23/31 , G02F1/1333 , C23C16/455 , H01L31/0203 , H01L51/00 , H01L51/52 , C07F3/06 , C07F5/06 , H01L21/56 , H01L23/29
CPC分类号： H01L23/3192 , C07F3/06 , C07F5/062 , C23C16/45529 , C23C16/45553 , G02F1/1333 , G02F1/133305 , G02F1/133345 , G02F2001/133302 , G02F2201/501 , G02F2202/022 , H01L21/563 , H01L23/293 , H01L31/0203 , H01L51/0034 , H01L51/005 , H01L51/0096 , H01L51/5253 , H01L2251/301 , H01L2251/305 , H01L2251/308 , H01L2251/558
摘要： The present invention relates to an organic-inorganic hybrid thin film and a method for preparing the same and more specifically to an organic-inorganic hybrid thin film including a stable new functional group and a method for preparing the organic-inorganic hybrid thin film that is formed by the molecular layer deposition method alternately using inorganic precursor and organic precursor.
摘要翻译： 本发明涉及有机 - 无机杂化薄膜及其制备方法，更具体地涉及包含稳定的新官能团的有机 - 无机杂化薄膜和制备有机 - 无机杂化薄膜的方法，其是 通过分子层沉积方法交替使用无机前体和有机前体形成。
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6.发明授权公开(公告)号：US11015243B2
公开(公告)日：2021-05-25
申请号：US16214878
申请日：2018-12-10
发明人： Myung Mo Sung , Jinwon Jung , Jin Seon Park
IPC分类号： C23C16/40 , H01L21/02 , H01L29/786 , C23C16/455 , C23C16/44 , H01L29/66
摘要： A layer forming method according to one embodiment of the present invention comprises: a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.
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公开(公告)号：US10985247B2
公开(公告)日：2021-04-20
申请号：US16214864
申请日：2018-12-10
发明人： Myung Mo Sung , Jinwon Jung , Hongbum Kim , Jin Seon Park
IPC分类号： H01L29/15 , H01L29/76 , H01L29/22 , H01L29/786 , H01L29/66 , H01L51/05 , H01L29/04 , H01L29/12 , H01L29/417 , H01L29/423 , H01L29/51
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
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公开(公告)号：US10978561B2
公开(公告)日：2021-04-13
申请号：US16214872
申请日：2018-12-10
发明人： Myung Mo Sung , Jinwon Jung , Hongbum Kim , Jin Seon Park
IPC分类号： H01L29/15 , H01L29/76 , H01L29/22 , H01L29/786 , H01L29/66 , H01L51/05 , H01L29/04 , H01L29/12 , H01L29/417 , H01L29/423 , H01L29/51
摘要： A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.
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9.发明授权公开(公告)号：US10453942B2
公开(公告)日：2019-10-22
申请号：US15947969
申请日：2018-04-09
发明人： Myung Mo Sung , Kyu-Seok Han , Kwan Hyuck Yoon
摘要： A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.
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公开(公告)号：US11948795B2
公开(公告)日：2024-04-02
申请号：US17052889
申请日：2019-12-09
发明人： Myung Mo Sung , Lynn Lee , Jin Won Jung , Jong Chan Kim
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C30B25/02 , C30B29/16 , H01L21/30 , H01L29/04 , H01L29/20 , H01L29/22 , H01L29/786 , H01L33/12 , H01L33/16 , H01L33/28 , H01L33/32
CPC分类号： H01L21/0262 , C23C16/407 , C23C16/45525 , C30B25/02 , C30B29/16 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02554 , H01L21/02609 , H01L21/30 , H01L29/045 , H01L29/2003 , H01L29/22 , H01L29/78696 , H01L33/12 , H01L33/16 , H01L33/28 , H01L33/32
摘要： Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.
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