Invention Grant
- Patent Title: Image sensors
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Application No.: US17693760Application Date: 2022-03-14
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Publication No.: US11929375B2Publication Date: 2024-03-12
- Inventor: Jonghyun Go , Jae-Kyu Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20160181449 2016.12.28
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.
Public/Granted literature
- US20220199664A1 IMAGE SENSORS Public/Granted day:2022-06-23
Information query
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