公开(公告)号：US11929375B2

公开(公告)日：2024-03-12

申请号：US17693760

申请日：2022-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US10957726B2

公开(公告)日：2021-03-23

申请号：US16108613

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Kyu Lee ,  Hyuk-Soon Choi ,  Seung-Sik Kim

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

公开(公告)号：US10608026B2

公开(公告)日：2020-03-31

申请号：US15650102

申请日：2017-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US12302654B2

公开(公告)日：2025-05-13

申请号：US18438908

申请日：2024-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US11935906B2

公开(公告)日：2024-03-19

申请号：US17686680

申请日：2022-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US11302725B2

公开(公告)日：2022-04-12

申请号：US16794864

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US10313963B2

公开(公告)日：2019-06-04

申请号：US15890903

申请日：2018-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Prasad Basavaraj Dandra ,  Vijay Ganesh Surisetty ,  Siddhi Chandrashekhar Mayekar ,  Akshay Rastogi ,  Jae-Kyu Lee

IPC: H04W4/00 ,  H04W48/18 ,  H04W88/06 ,  H04W8/22 ,  H04W48/16

Abstract: Some example embodiments disclose methods for selecting registered public land mobile network (RPLMN) radio access technology (RAT) modes in wireless communication devices. The method as disclosed herein includes determining location information of the wireless communication device; validating the location information; deriving a RPLMN from the validated location information when the validating is successful; storing a RPLMN access technology (AccTech) based on the derived RPLMN; and selecting a RAT mode using the stored RPLMN AccTech.

公开(公告)号：US20180182794A1

公开(公告)日：2018-06-28

申请号：US15650102

申请日：2017-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20200185438A1

公开(公告)日：2020-06-11

申请号：US16794864

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US10374087B2

公开(公告)日：2019-08-06

申请号：US14956908

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Won Kim ,  Jae-Kyu Lee

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L27/22 ,  H01L21/762

Abstract: A semiconductor device includes a substrate, first and second isolation layers, an insulation layer pattern, and a gate structure. The substrate has a cell region and a peripheral region. The first isolation layer is buried in a first upper portion of the substrate in the peripheral region. The second isolation layer is buried in a second upper portion of the substrate in the cell region, and extends along a first direction substantially parallel to a top surface of the substrate. The insulation layer pattern is buried in the first upper portion, and extends along a second direction substantially parallel to the top surface of the substrate and substantially perpendicular to the first direction. The insulation layer pattern has a lower surface higher than a lower surface of the second isolation layer, and applies a stress to a portion of the substrate adjacent thereto.