Invention Grant
- Patent Title: HEMT and method of fabricating the same
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Application No.: US18138145Application Date: 2023-04-24
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Publication No.: US11929431B2Publication Date: 2024-03-12
- Inventor: Po-Kuang Hsieh , Shih-Hung Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1910747978.7 2019.08.14
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66

Abstract:
A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A shallow recess, a first deep recess and a second deep recess are disposed in the second III-V compound layer. The first deep recess and the second deep recess are respectively disposed at two sides of the shallow recess. The source electrode fills in the first deep recess and contacts the top surface of the first III-V compound layer. A drain electrode fills in the second deep recess and contacts the top surface of the first III-V compound layer. The shape of the source electrode and the shape of the drain electrode are different from each other. A gate electrode is disposed on the shallow recess.
Public/Granted literature
- US20230261102A1 Hemt and method of fabricating the same Public/Granted day:2023-08-17
Information query
IPC分类: