- 专利标题： Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same
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申请号： US17481479申请日： 2021-09-22
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公开(公告)号： US11942544B2公开(公告)日： 2024-03-26
- 发明人: Young Gwang Yoon
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T GROUP LLP
- 优先权： KR 20210045308 2021.04.07
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/10 ; H01L29/423 ; H01L29/66
摘要：
A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second stacked structure including a second lower dielectric layer, a second horizontal gate structure, and a second upper dielectric layer stacked vertically, and having a first side facing a first side of the first stacked structure; a first channel layer formed on the first side of the first stacked structure; a second channel layer formed on the first side of the second stacked structure; a lower electrode layer commonly coupled to lower ends of the first and second channel layers between the first and second stacked structures; a first upper electrode layer coupled to an upper end of the first channel layer; and a second upper electrode layer coupled to an upper end of the second channel layer.
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