- 专利标题: Chalcogenide sputtering target and method of making the same
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申请号: US17114216申请日: 2020-12-07
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公开(公告)号: US11946132B2公开(公告)日: 2024-04-02
- 发明人: Michael R. Pinter
- 申请人: Honeywell International Inc.
- 申请人地址: US NJ Morris Plains
- 专利权人: Honeywell International Inc.
- 当前专利权人: Honeywell International Inc.
- 当前专利权人地址: US NC Charlotte
- 代理机构: Faegre Drinker Biddle & Reath LLP
- 分案原申请号: US15670487 2017.08.07
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C04B35/547 ; C04B35/653 ; C22C1/00 ; C23C14/06 ; H01J37/34
摘要:
In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.
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