Invention Grant
- Patent Title: Method for depositing boron containing silicon germanium layers
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Application No.: US17743039Application Date: 2022-05-12
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Publication No.: US11946157B2Publication Date: 2024-04-02
- Inventor: Rami Khazaka , Qi Xie
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: C30B25/10
- IPC: C30B25/10 ; C30B29/06 ; C30B29/08 ; C30B33/12
Abstract:
Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.
Public/Granted literature
- US20220364262A1 METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS Public/Granted day:2022-11-17
Information query
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