公开(公告)号：US11784045B2

公开(公告)日：2023-10-10

申请号：US17570116

申请日：2022-01-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Martin Christopher Holland

IPC分类号： H01L29/00 ,  H01L21/02 ,  H01L21/762 ,  C30B29/08 ,  H01L29/78 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  H01L29/06 ,  H01L29/04

CPC分类号： H01L21/02653 ,  C30B19/106 ,  C30B19/12 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/7624 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/7838

摘要： A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

公开(公告)号：US20220367174A1

公开(公告)日：2022-11-17

申请号：US17873122

申请日：2022-07-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： I-Sheng CHEN ,  Tzu-Chiang CHEN ,  Cheng-Hsien WU

IPC分类号： H01L21/02 ,  C30B33/10 ,  C30B29/06 ,  C30B29/66 ,  C30B33/02 ,  H01L21/308 ,  C30B29/08 ,  H01L21/306

摘要： A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

公开(公告)号：US20220216347A1

公开(公告)日：2022-07-07

申请号：US17701232

申请日：2022-03-22

申请人： Intel Corporation

发明人： Van H. LE ,  Ashish AGRAWAL ,  Seung Hoon SUNG ,  Abhishek A. SHARMA ,  Ravi PILLARISETTY

IPC分类号： H01L29/786 ,  C30B29/08 ,  C30B29/40 ,  H01L27/088

摘要： Described herein are apparatuses, systems, and methods associated with metal-assisted transistors. A single crystal semiconductor material may be seeded from a metal. The single crystal semiconductor material may form a channel region, a source, region, and/or a drain region of the transistor. The metal may form the source contact or drain contact, and the source region, channel region, and drain region may be stacked vertically on the source contact or drain contact. Alternatively, a metal-assisted semiconductor growth process may be used to form a single crystal semiconductor material on a dielectric material adjacent to the metal. The portion of the semiconductor material on the dielectric material may be used to form the transistor. Other embodiments may be described and claimed.

公开(公告)号：US20220162770A1

公开(公告)日：2022-05-26

申请号：US17514312

申请日：2021-10-29

申请人： Changsha University of Science & Technology

发明人： Wei XIE ,  Yibing LUO ,  Yonggang TONG ,  Xiaofeng YU ,  Taishan CAO

IPC分类号： C30B33/02 ,  C30B29/08 ,  F27B5/04 ,  F27D5/00 ,  F27B5/10

摘要： A high-temperature forming device for imperfect single-crystal wafers used for a neutron monochromator includes a heating electric furnace, a temperature control system, a die system, a loading system, a vacuum protection system, and an auxiliary system. Where a furnace mouth of the heating electric furnace faces downwards, the heating electric furnace can be lifted vertically or a hearth of the heating electric furnace can be opened and closed. A vacuum protection cavity is formed by a glass cover and a blocking flange, a through hole is formed in one end of the glass cover, and the other end of the glass cover is closed. An operation opening is formed in the glass cover, the die system includes an upper die, a middle die, and a lower die, the middle die is a composite die.

公开(公告)号：US20210134594A1

公开(公告)日：2021-05-06

申请号：US16671107

申请日：2019-10-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Martin Christopher Holland

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L29/78 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  C30B29/08

摘要： A method of forming a semiconductor structure is provided. The method includes etching a trench in a template layer over a substrate, forming a seed structure over a bottom surface of the trench, forming a dielectric cap over the seed structure, and growing a single crystal semiconductor structure within the trench using a vapor liquid solid epitaxy growth process. The single crystal semiconductor structure is grown from a liquid-solid interface between the seed structure and the bottom surface of the trench.

公开(公告)号：US20210072435A1

公开(公告)日：2021-03-11

申请号：US17099113

申请日：2020-11-16

申请人： Carl Zeiss SMT GmbH

发明人： Andreas SCHMEHL ,  Heiko SIEKMANN

IPC分类号： G02B5/08 ,  C30B11/14 ,  C30B29/06 ,  C30B29/08

摘要： A method for producing a substrate (10) for an optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12). An associated reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate is typically produced in accordance with the associated method and has a quasi-monocrystalline volume region (8).

公开(公告)号：US10655243B2

公开(公告)日：2020-05-19

申请号：US15667452

申请日：2017-08-02

申请人： QROMIS, Inc.

发明人： Vladimir Odnoblyudov ,  Cem Basceri

IPC分类号： H01L21/02 ,  C30B25/20 ,  C30B29/40 ,  C30B25/18 ,  C30B29/08

摘要： An engineered substrate includes a support structure comprising a polycrystalline ceramic core, an adhesion layer coupled to the polycrystalline ceramic core, and a barrier layer coupled to the adhesion layer. The engineered substrate also includes an bonding layer coupled to the support structure, a substantially single crystal layer coupled to the bonding layer, and an epitaxial gallium nitride layer coupled to the substantially single crystal layer.

公开(公告)号：US20180016705A1

公开(公告)日：2018-01-18

申请号：US15627149

申请日：2017-06-19

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Theresa K. GUARINI ,  Jeffrey TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC分类号： C30B25/18 ,  C30B29/08 ,  C30B29/06

CPC分类号： C30B25/186 ,  C30B29/06 ,  C30B29/08

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US09816201B2

公开(公告)日：2017-11-14

申请号：US14814440

申请日：2015-07-30

申请人： Scott M. Zimmerman ,  William R. Livesay ,  Richard L. Ross

发明人： Scott M. Zimmerman ,  William R. Livesay ,  Richard L. Ross

IPC分类号： C30B25/18 ,  C30B25/10 ,  C30B25/06 ,  C30B23/08 ,  C30B23/02 ,  C30B19/12 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/42 ,  C30B29/40 ,  C30B29/16 ,  H01L31/0304 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/036 ,  H01L31/0693 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/18 ,  H01L33/00 ,  H01L31/0725 ,  C30B25/02 ,  H01L31/054

CPC分类号： C30B25/186 ,  C30B19/12 ,  C30B23/025 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/105 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/52 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0054 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/0083 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/31678

摘要： Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

公开(公告)号：US20170253989A1

公开(公告)日：2017-09-07

申请号：US15450461

申请日：2017-03-06

申请人： TOKYO ELECTRON LIMITED

发明人： Yoichiro CHIBA ,  Daisuke SUZUKI ,  Kazuhide HASEBE

IPC分类号： C30B1/02 ,  C30B29/08 ,  C23C16/458 ,  C30B29/68 ,  C23C16/06 ,  C23C16/52 ,  C30B29/06 ,  C30B29/52

摘要： A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.