- 专利标题: Semiconductor device having power control circuit
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申请号: US17740200申请日: 2022-05-09
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公开(公告)号: US11948620B2公开(公告)日: 2024-04-02
- 发明人: Kazuhiro Yoshida , Go Takashima , Haruka Momota
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G11C11/10
- IPC分类号: G11C11/10 ; G11C11/4074 ; H10B12/00
摘要:
Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.
公开/授权文献
- US20230360688A1 SEMICONDUCTOR DEVICE HAVING POWER CONTROL CIRCUIT 公开/授权日:2023-11-09
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