ESD placement in semiconductor device

    公开(公告)号:US11764571B2

    公开(公告)日:2023-09-19

    申请号:US17071562

    申请日:2020-10-15

    IPC分类号: H02H9/04 H01L27/02

    摘要: Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.

    ESD PLACEMENT IN SEMICONDUCTOR DEVICE

    公开(公告)号:US20220123550A1

    公开(公告)日:2022-04-21

    申请号:US17071562

    申请日:2020-10-15

    IPC分类号: H02H9/04 H01L27/02

    摘要: Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.

    SEMICONDUCTOR DEVICE HAVING POWER CONTROL CIRCUIT

    公开(公告)号:US20230360688A1

    公开(公告)日:2023-11-09

    申请号:US17740200

    申请日:2022-05-09

    IPC分类号: G11C11/4074 H01L27/108

    CPC分类号: G11C11/4074 H01L27/10897

    摘要: Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.

    Semiconductor device having power control circuit

    公开(公告)号:US11948620B2

    公开(公告)日:2024-04-02

    申请号:US17740200

    申请日:2022-05-09

    CPC分类号: G11C11/4074 H10B12/50

    摘要: Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.