- 专利标题: Micro light-emitting diode
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申请号: US17084018申请日: 2020-10-29
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公开(公告)号: US11949043B2公开(公告)日: 2024-04-02
- 发明人: Yen-Chun Tseng , Tzu-Yang Lin , Jyun-De Wu , Fei-Hong Chen , Yi-Chun Shih
- 申请人: PlayNitride Display Co., Ltd.
- 申请人地址: TW Zhunan Township, Miaoli County
- 专利权人: PLAYNITRIDE DISPLAY CO., LTD.
- 当前专利权人: PLAYNITRIDE DISPLAY CO., LTD.
- 当前专利权人地址: TW Zhunan Township, Miaoli County
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H01L33/30
- IPC分类号: H01L33/30 ; H01L33/22 ; H01L33/32 ; H01L33/00
摘要:
A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.
公开/授权文献
- US20220140188A1 MICRO LIGHT-EMITTING DIODE 公开/授权日:2022-05-05
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