- 专利标题: Bulk acoustic wave resonator and manufacturing method therefor
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申请号: US16968926申请日: 2019-02-02
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公开(公告)号: US11949397B2公开(公告)日: 2024-04-02
- 发明人: Wei Pang , Menglun Zhang , Chen Sun
- 申请人: ROFS Microsystem (Tianjin) Co., Ltd
- 申请人地址: CN Tianjin
- 专利权人: ROFS Microsystem (Tianjin) Co., Ltd
- 当前专利权人: ROFS Microsystem (Tianjin) Co., Ltd
- 当前专利权人地址: CN Tianjin
- 代理机构: Bay State IP, LLC
- 优先权: CN 1810141419.7 2018.02.11
- 国际申请: PCT/CN2019/074534 2019.02.02
- 国际公布: WO2019/154345A 2019.08.15
- 进入国家日期: 2020-08-11
- 主分类号: H03H9/02
- IPC分类号: H03H9/02 ; H03H3/02 ; H03H9/13 ; H03H9/17
摘要:
The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.
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