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公开(公告)号：US11949397B2
公开(公告)日：2024-04-02
申请号：US16968926
申请日：2019-02-02
发明人： Wei Pang , Menglun Zhang , Chen Sun
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/02031 , H03H9/02133 , H03H9/132 , H03H9/173 , H03H9/175 , H03H9/176 , H03H2003/021 , H03H2003/025
摘要： The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.
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公开(公告)号：US20210050839A1
公开(公告)日：2021-02-18
申请号：US16968926
申请日：2019-02-02
发明人： Wei Pang , Menglun Zhang , Chen Sun
摘要： The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.
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