Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US17475439Application Date: 2021-09-15
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Publication No.: US11955416B2Publication Date: 2024-04-09
- Inventor: Cheng-Hsien Lu , Yun-Yuan Wang , Dai-Ying Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48
Abstract:
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.
Public/Granted literature
- US20230079160A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-03-16
Information query
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