Invention Grant
- Patent Title: Semiconductor device with backside power rail and methods of fabrication thereof
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Application No.: US17985991Application Date: 2022-11-14
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Publication No.: US11955552B2Publication Date: 2024-04-09
- Inventor: Li-Zhen Yu , Huan-Chieh Su , Shih-Chuan Chiu , Lin-Yu Huang , Cheng-Chi Chuang , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ CARR LAW OFFICE
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L27/088 ; H01L29/417 ; H01L29/49 ; H01L29/66
Abstract:
A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.
Public/Granted literature
- US20230075343A1 SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF Public/Granted day:2023-03-09
Information query
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