Invention Grant
- Patent Title: Semiconductor device having nanosheet transistor and methods of fabrication thereof
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Application No.: US17993598Application Date: 2022-11-23
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Publication No.: US11961887B2Publication Date: 2024-04-16
- Inventor: Shu-Wen Shen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ CARR LAW OFFICE
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8234 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/786
Abstract:
A semiconductor device structure is provided. The device includes a plurality of semiconductor layers and a gate electrode layer surrounding each semiconductor layer of the plurality of semiconductor layers. The gate electrode layer includes a first part, and a second part below the first part, the second part comprises a first portion, wherein an exterior surface of the first portion has a first radius of curvature, and a second portion below the first portion, and a third portion below the second portion, wherein an exterior surface of the third portion having a second radius of curvature different than the first radius of curvature.
Public/Granted literature
- US20230095479A1 SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF Public/Granted day:2023-03-30
Information query
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