Disclosed is a vertical silicon carbide power MOSFET with a 4H-SiC substrate of n+-type as drain and a 4H-Si C epilayer of n−-type, epitaxially grown on the 4H-SiC substrate acting as drift region and a source region of p++-type, a well region of p-type, a channel region of p-type and a contact region of n++-type implanted into the drift region and a metal gate insulated from the source and drift region by a gate-oxide. A high mobility layer with a vertical thickness in a range 0.1 nm to 50 nm exemplarily in the range of 0.5 nm to 10 nm is provided at the interface between the 4H-SiC epilayer and the gate-oxide.