Invention Grant
- Patent Title: Method for manufacturing a detection structure with an optimised absorption rate, and said structure
-
Application No.: US17312616Application Date: 2019-12-11
-
Publication No.: US11967665B2Publication Date: 2024-04-23
- Inventor: Abdelkader Aliane , Jean-Louis Ouvrier-Buffet
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR 72785 2018.12.13
- International Application: PCT/FR2019/053017 2019.12.11
- International Announcement: WO2020/120905A 2020.06.18
- Date entered country: 2021-06-10
- Main IPC: H01L31/113
- IPC: H01L31/113 ; G01J5/02 ; G01J5/08 ; G01J5/24
Abstract:
A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.
Public/Granted literature
- US20220020892A1 METHOD FOR MANUFACTURING A DETECTION STRUCTURE WITH AN OPTIMISED ABSORPTION RATE, AND SAID STRUCTURE Public/Granted day:2022-01-20
Information query
IPC分类:
