- 专利标题: Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
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申请号: US17115772申请日: 2020-12-08
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公开(公告)号: US11967946B2公开(公告)日: 2024-04-23
- 发明人: Patrick Turner
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Nagaokakyo
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JP Nagaokakyo
- 代理机构: ArentFox Schiff LLP
- 主分类号: H03H9/56
- IPC分类号: H03H9/56 ; H03H3/02 ; H03H9/02 ; H03H9/13 ; H03H9/17 ; H10N30/072 ; H10N30/87
摘要:
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. A bonding layer is formed on the surface of the substrate. An etch-stop layer is sandwiched between the bonding layer and the back surface of the single crystal piezoelectric plate. A portion of the single crystal piezoelectric plate and the etch-stop layer, but not the bonding layer, forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The etch-stop layer is impervious to an etch process used to form the cavity.
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