Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
摘要:
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. A bonding layer is formed on the surface of the substrate. An etch-stop layer is sandwiched between the bonding layer and the back surface of the single crystal piezoelectric plate. A portion of the single crystal piezoelectric plate and the etch-stop layer, but not the bonding layer, forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The etch-stop layer is impervious to an etch process used to form the cavity.
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