A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.