Invention Grant
- Patent Title: Substrate processing apparatus and method for manufacturing semiconductor device
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Application No.: US17462673Application Date: 2021-08-31
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Publication No.: US11976362B2Publication Date: 2024-05-07
- Inventor: Takashi Asano
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20153458 2020.09.14
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/34 ; C23C16/40 ; C23C16/458 ; H01L21/02

Abstract:
According to one embodiment, a substrate processing apparatus includes: an inner tube extending in a first direction and configured to accommodate a plurality of substrates; an outer tube configured to surround the inner tube and provide an airtight sealed space; a nozzle disposed in the inner tube; a gas supply configured to supply a processing gas to the inner tube via the nozzle; at least one slit provided on a side surface of the inner tube facing the nozzle; and an exhaust port coupled to the outer tube. Along the first direction, an opening area of a central portion of the slit is larger than an opening area of end portions of the slit.
Public/Granted literature
- US20220081772A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-03-17
Information query
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